MJE3440 silicon npn transistor n sgs-thomson preferred salestype n npn transistor description the MJE3440 is a npn silicon epitaxial planar transistors in sot-32 plastic package. it is designed for use in consumer and industrial line-operated applications. internal schematic diagram june 1997 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 350 v v ceo collector-emitter voltage (i b = 0) 250 v v ebo emitter-base voltage (i c = 0) 5v i c collector current 0.3 a i b base current 0.15 a p tot total power dissipation at tcase 25 o c 15 w t stg storage temperature -65 to +150 o c t j max. operating junction temperature 150 o c sot-32 3 2 1 1/5
thermal data r thj-case thermal resistance junction-case max 8.33 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 250 v 20 m a i cev collector cut-off current (v be = -1.5v) v ce = 300 v 500 m a i ceo collector cut-off current (i b = 0) v ce = 200 v 50 m a i ebo emitter cut-off current (i c = 0) v eb = 5 v 20 m a v ce(sat) * collector-emitter saturation voltage i c = 50 ma i b = 4 ma 0.5 v v be(sat) * base-emitter saturation voltage i c = 50 ma i b = 4 ma 0.3 v v be * base-emitter voltage i c = 50 ma v ce = 10 v 0.8 v h fe * dc current gain i c = 2 ma v ce = 10 v i c = 20 ma v ce = 10 v 30 50 200 h fe small signal current gain i c = 5 ma v ce = 10 v f = 1 khz 25 f t transistor frequency i c = 10 ma v ce = 10 v f = 5 mhz 15 mhz c cbo * collector-base capacitance v cb = 10 v i e = 0 f = 1 mhz 10 pf * pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating area derating curve MJE3440 2/5
dc current gain base-emitter voltage collector-emitter saturation voltage transition frequency MJE3440 3/5
dim. mm inch min. typ. max. min. typ. max. a 7.4 7.8 0.291 0.307 b 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 c 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 d 15.4 16.0 0.606 0.629 e2.2 0.087 e3 4.15 4.65 0.163 0.183 f3.8 0.150 g 3 3.2 0.118 0.126 h2.540.100 h2 2.15 0.084 h2 0016114 sot-32 (to-126) mechanical data MJE3440 4/5
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to change without noti ce. this publication supersedes and replaces all info rmation previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of s gs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in it aly - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - i taly - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . MJE3440 5/5
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